Effect of Dysprosium Substitution on the Properties of Bismuth Titanate Thin Films Prepared by Sol-Gel Method

被引：0
|
作者：
Kao, M. C. [1 ]
Chen, H. Z. [1 ]
Young, S. L. [1 ]
Yu, C. C. [1 ]
Lin, C. H. [1 ]
Lin, C. C. [2 ]
Lee, C. M. [1 ]
机构：
[1] Hsiuping Inst Technol, Dept Elect Engn, Taichung, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
来源：
FERROELECTRICS | 2009年 / 382卷
关键词：
Bismuth titanate; microstructure; sol-gel; ferroelectric; FERROELECTRIC PROPERTIES; BLT;
D O I：
10.1080/00150190902873279
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dysprosium-substituted bismuth titanate (Bi3.2Dy0.8Ti3O12, BDT) thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by a sol-gel method. The effects of dysprosium-substitution on the microstructure and ferroelectric properties of Bi4Ti3O12 thin films were investigated. X-Ray diffraction analysis reveals that the highly degree of (117) orientation can be obtained for BDT thin films. The improved ferroelectric properties can be attributed to the enhanced degree of (117) orientation of Bi3.2Dy0.8Ti3O12 thin films. The highly (117)-oriented Bi3.2Dy0.8Ti3O12 thin films exhibit high remanent polarization (2P(r)) of 52 mu C/cm(2) and low coercive field (2E(c)) of 120 kV/cm. The corresponding results show that the obtained Bi3.2Dy0.8Ti3O12 thin film exhibited excellent ferroelectric properties and, thus, was suitable for application to non-volatile ferroelectric random access memory applications.
引用
收藏
页码：182 / 186
页数：5
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