Current Enhancement in the Vertical-Type Metal-Base Organic Transistors

被引：2

作者：

Suzuki, Fumito ^{[1
]}

Nakayama, Ken-ichi ^{[1
,2
]}

Pu, Yong-Jin ^{[1
]}

Kido, Junji ^{[1
]}

机构：

[1] Yamagata Univ, Yamagata 9928150, Japan

[2] JST PRESTO, Fukuoka, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2009年 / 504卷

关键词：

base electrode; low-voltage operation; metal-base organic transistors; on/off ratio; FIELD-EFFECT TRANSISTORS;

D O I：

10.1080/15421400902946236

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The vertical-type metal-base organic transistors ( MBOT) are high-performance transistors which have a simple layered structure of organic/metal/organic layers. In this study, we investigated various structures for the collector layer to enhance current modulation and reduce operation voltage. The device having collector layers composed of perylene derivatives/bathocuproine(BCP)/C-60 and base electrode of LiF/Al showed very high current modulation of 165.1 A/cm(2) at 2 V of collector voltage and 1 V of base voltage. We found that the LiF layer and BCP layer contribute to current enhancement, and the C-60 layer contributes to suppression of leakage current, respectively.

引用

收藏

页码：133 / 139

页数：7

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