Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

被引：46

作者：

Shen, H. ^{[1
]}

Wraback, M. ^{[1
]}

Zhong, H. ^{[2
,3
]}

Tyagi, A. ^{[2
,3
]}

DenBaars, S. P. ^{[2
,3
]}

Nakamura, S. ^{[2
,3
]}

Speck, J. S. ^{[2
,3
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

electroreflectance; gallium compounds; III-V semiconductors; indium compounds; light polarisation; semiconductor growth; semiconductor quantum wells; PIEZOELECTRIC FIELD; MODULATION SPECTROSCOPY; ELECTROREFLECTANCE; HETEROSTRUCTURES; SEMICONDUCTORS; DIODES;

D O I：

10.1063/1.3167809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an electroreflectance study of the piezoelectric field in a semipolar (10 (11) over bar) oriented In(0.15)Ga(0.85)N quantum well (QW). The flatband condition is precisely determined by examining the zero-crossing of the electroreflectance signal. The polarization field determined by the flatband condition is 840 +/- 150 kV/cm, in the direction opposite to the built-in field. The corresponding polarization charge at the heterointerface is 0.008 +/- 0.002 C/m(2). Our experimental result indicates that in the semipolar InGaN/GaN QW there is a crossover angle between the C-axis and the growth direction where the polarization field vanishes.

引用

页数：3

共 20 条

[1]

*ANSI IEEE, 1987, IEEE STAND PIEZ, P176

[2] Determination of the piezoelectric field in InGaN quantum wells [J].