A new empirical large signal model for silicon RF LDMOS FETs

被引：16
|
作者：
Miller, M
Dinh, T
Shumate, E
机构：
来源：
1997 IEEE MTT-S SYMPOSIUM ON TECHNOLOGIES FOR WIRELESS APPLICATIONS DIGEST | 1997年
关键词：
D O I：
10.1109/MTTTWA.1997.595103
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A new empirical large signal drain current source model, that is single-piece and continuously differentiable, has been developed for silicon LDMOS transistors. The new model is capable of accurately representing the current-voltage characteristics and their derivatives. A single continuously differentiable form models the subthreshold, triode, and saturation regions of operation. The model was implemented in a commercial harmonic balance simulator and parameter extraction software. Measured and simulated load-pull measurements at a class AB operating point are compared and show very good agreement.
引用
收藏
页码：19 / 22
页数：4
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