Erbium-doped polymer waveguide amplifiers for PCB-integrated optical links

被引:3
作者
Ziarko, Marcin [1 ]
Bamiedakis, Nikos [1 ]
Kumi-Barimah, Eric [2 ]
Jose, Gin [2 ]
Penty, Richard, V [1 ]
White, Ian H. [1 ]
机构
[1] Univ Cambridge, Ctr Photon Syst, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
[2] Univ Leeds, Sch Chem & Proc Engn, Inst Mat Res, Leeds LS2 9JT, W Yorkshire, England
来源
OPTICAL INTERCONNECTS XIX | 2019年 / 10924卷
基金
英国工程与自然科学研究理事会;
关键词
EDWA; polymer; plasma implantation; optical interconnects; erbium; TELLURITE GLASSES; LASER; GAIN;
D O I
10.1117/12.2509983
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optical technologies are increasingly considered for use in high-performance electronic systems to overcome the performance bottleneck of electrical interconnects when operating at high frequencies and provide high-speed communication between electronic chips and modules. Polymer waveguides are leading candidates for implementing board-level optical interconnections as they exhibit favourable mechanical, thermal and optical properties for direct integration onto conventional printed circuit boards (PCBs). Numerous system demonstrators have been reported in recent years featuring different types of polymer materials and opto-electronic (OE) PCB designs. However, all demonstrated polymer-based interconnection technologies are currently passive, which limits the length of the on-board links and the number of components that can be connected in optical bus architectures. In this paper therefore, we present work towards the formation of low-cost optical waveguide amplifiers that can be readily integrated onto standard PCBs by combining two promising optical technologies: siloxane-based polymers and ultra-fast laser plasma implantation (ULPI). Siloxane-based waveguides exhibit high-temperature resistance in excess of 300 degrees C and low loss at different wavelength ranges, while ULPI has been demonstrated to produce very high dopant concentrations in glass thin films with values of 1.63x10(21) cm(-3) recently reported in Er-doped silica layers. Here we present detailed simulation studies that demonstrate the potential to achieve an internal gain of up to 8 dB/cm from such structures and report on initial experimental work on Er-doped films and waveguides demonstrating photoluminescence and good lifetimes.
引用
收藏
页数:10
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