Tunable field effect properties in solid state and flexible graphene electronics on composite high - low k dielectric

被引：4

作者：

Kumar, Arunandan ^{[1
]}

Tyagi, Priyanka ^{[2
,3
]}

Dagar, Janardan ^{[2
]}

Srivastava, Ritu ^{[2
]}

机构：

[1] Univ Bourgogne, Lab Interdisciplinaire Carnot Bourgogne, CNRS, UMR 5209, 9 Ave Alain Savary, Dijon, France

[2] CSIR Natl Phys Lab, Phys Energy Harvesting Div, CSIR Network Inst Solar Energy NISE, Dr KS Krishnan Rd, New Delhi 110012, India

[3] Indian Inst Technol, Ctr Appl Res Elect, New Delhi 110016, India

来源：

CARBON | 2016年 / 99卷

关键词：

THIN-FILM TRANSISTORS; TRANSPARENT;

D O I：

10.1016/j.carbon.2015.12.073

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm(2)/V at V-D = -5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexible FEDs with only 5% and 12% variation in mobility for 300 and 750 bending are obtained. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：579 / 584

页数：6

共 18 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/NNANO.2010.132, 10.1038/nnano.2010.132]

[2] High-dielectric-constant ceramic-powder polymer composites [J].

Bai, Y ;

Cheng, ZY ;

Bharti, V ;

Xu, HS ;

Zhang, QM .

APPLIED PHYSICS LETTERS, 2000, 76 (25) :3804-3806

[3]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[4]

Cao H., 2009, HIGH MOBILITY AMBIPO, P133

[5] Organic thin-film transistors with nanocomposite dielectric gate insulator [J].

Chen, FC ;

Chu, CW ;

He, J ;

Yang, Y ;

Lin, JL .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3295-3297

[6] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[7] Transparent, Flexible, All-Reduced Graphene Oxide Thin Film Transistors [J].

He, Qiyuan ;

Wu, Shixin ;

Gao, Shuang ;

Cao, Xiehong ;

Yin, Zongyou ;

Li, Hai ;

Chen, Peng ;

Zhang, Hua .

ACS NANO, 2011, 5 (06) :5038-5044

[8] POLYSTYRENE-TITANIA COMPOSITE AS A DIELECTRIC MATERIAL [J].

KHASTGIR, D ;

MAITI, HS ;

BANDYOPADHYAY, PC .

MATERIALS SCIENCE AND ENGINEERING, 1988, 100 :245-253

[9] High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics [J].

Kim, Beom Joon ;

Jang, Houk ;

Lee, Seoung-Ki ;

Hong, Byung Hee ;

Ahn, Jong-Hyun ;

Cho, Jeong Ho .

NANO LETTERS, 2010, 10 (09) :3464-3466

[10] Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors [J].

Kim, P. ;

Zhang, X. -H. ;

Domercq, B. ;

Jones, S. C. ;

Hotchkiss, P. J. ;

Marder, S. R. ;

Kippelen, B. ;

Perry, J. W. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

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