Substrate pre-treatment and initial growth: Strategies III-nitride growth on sapphire by molecular towards high-quality beam epitaxy

被引：6

作者：

Falth, J. F. ^{[1
]}

Davidsson, S. K. ^{[1
]}

Liu, X. Y. ^{[1
]}

Andersson, T. G. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Appl Semicon Phys MBE, S-41296 Gothenburg, Sweden

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 02期

关键词：

crystal morphology; crystal structure; molecular beam epitaxy; semiconducting gallium compounds; semiconducting III-V materials;

D O I：

10.1016/j.tsf.2005.12.197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sapphire substrates annealed at 1200 degrees C in N-2:O-2 (3 : 1) developed terrace-and-step morphology, ideal for III-nitride growth by molecular beam epitaxy. In situ treatment of sapphire substrates, using Ga deposition and desorption prior to growth, is shown to be negative for GaN growth. Nitridation transforms the sapphire substrate surface to a lateral structure similar to AlN (mismatch < 2.5%). The surface lattice parameters after nitridation did not depend on the substrate temperature. AlN nucleation layer growth conditions have been optimized for growth of GaN. Ideal Al/N flux ratio was found to be 0.6 for a 9 nm thick nucleation layer. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：603 / 606

页数：4

共 19 条

[1] Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy [J].

Brandt, O ;

Muralidharan, R ;

Waltereit, P ;

Thamm, A ;

Trampert, A ;

von Kiedrowski, H ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :4019-4021

[2]

CUI J, 2001, MRS INTERNET J NITID, V5

[3] Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments [J].

Dwikusuma, F ;

Saulys, D ;

Kuech, TF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (11) :G603-G608

[4] Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN heterostructures -: art. no. 045316 [J].

Gurusinghe, MN ;

Davidsson, SK ;

Andersson, TG .

PHYSICAL REVIEW B, 2005, 72 (04)

[5] Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation [J].

Gurusinghe, MN ;

Andersson, TG .

PHYSICAL REVIEW B, 2003, 67 (23)

[6] On the initial stages of AlN thin-film growth onto, 0001 oriented Al2O3 substrates by molecular beam epitaxy [J].

Heffelfinger, JR ;

Medlin, DL ;

McCarty, KF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :466-472

[7] Mechanisms of surface faceting and coarsening [J].

Heffelfinger, JR ;

Carter, CB .

SURFACE SCIENCE, 1997, 389 (1-3) :188-200

[8] High-quality GaN layers on c-plane sapphire substrates by plasma-assisted molecular-beam epitaxy using double-step AlN buffer process [J].

Jeganathan, K ;

Shen, XQ ;

Ide, T ;

Shimizu, M ;

Okumura, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A) :4454-4457

[9] Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy [J].

Koblmueller, G ;

Averbeck, R ;

Geelhaar, L ;

Riechert, H ;

Hösler, W ;

Pongratz, P .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :9591-9596

[10] The effect of substrate surface roughness on GaN growth using MOCVD process [J].

Kum, DW ;

Byun, DJ .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) :1098-1102

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