Anomalous Hall effect in highly Mn-Doped silicon films

被引：11

作者：

Nikolaev, S. N. ^{[1
]}

Aronzon, B. A. ^{[1
,2
]}

Ryl'kov, V. V. ^{[1
,2
]}

Tugushev, V. V. ^{[1
]}

Demidov, E. S. ^{[3
]}

Levchuk, S. A. ^{[3
]}

Lesnikov, V. P. ^{[3
]}

Podol'skii, V. V. ^{[3
]}

Gareev, R. R. ^{[4
]}

机构：

[1] Kurchatov Inst, Russian Res Ctr, Moscow 123182, Russia

[2] Russian Acad Sci, Inst Theoret & Appl Electrodynam, Moscow 127412, Russia

[3] Nizhnii Novgorod State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

[4] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

来源：

JETP LETTERS | 2009年 / 89卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

SEMICONDUCTORS; MN4SI7;

D O I：

10.1134/S0021364009120030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The transport and magnetic properties of Mn (x) Si1 - x films with a high (x a parts per thousand 0.35) content of Mn produced by laser deposition at growth temperatures of 300-350A degrees C have been studied in a temperature range of 5-300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50-200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to a parts per thousand 230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 - x (x a parts per thousand 0.3) type ferromagnet with delocalized spin density.

引用

页码：603 / 608

页数：6

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