RETRACTED: Stress relaxation mechanism in the Si-SiO2 system and its influence on the interface properties (Retracted Article)

被引：0
|
作者：
Kropman, Daniel [1 ]
Seeman, Viktor [2 ]
Dolgov, Sergei [2 ,3 ]
Heinmaa, Ivo
Medvid, Artur [4 ]
机构：
[1] Tallinn Univ Technol, Tallin, Tallinn, Estonia
[2] Univ Tartu, Tartu, Estonia
[3] Inst Chem & Biophys, Tallinn, Estonia
[4] Riga Tech Univ, Riga, Latvia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 10-12 | 2016年 / 13卷 / 10-12期
关键词：
stress relaxation; Si-SiO2; system; interface; EPR; SEM; POINT-DEFECTS;
D O I：
10.1002/pssc.201600051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The results of the investigation of stress relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stress relaxation mechanisms depend on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stress relaxation by strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：790 / 792
页数：3
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