Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography

被引：51

作者：

Rishton, SA

Lu, Y

Altman, RA

Marley, AC

Bian, XP

Jahnes, C

Viswanathan, R

Xiao, G

Gallagher, WJ

Parkin, SSP

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 35卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0167-9317(96)00107-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic tunnel junctions consisting of permalloy and cobalt thin film electrodes, separated by a thin aluminum oxide tunnel barrier, have been fabricated by e-beam lithography at dimensions down to 120 nanometers. The devices are fabricated by sputter deposition and ion milling. They exhibit magnetoresistances of up to 22% at room temperature. Evidence of individual domain switching is observed. The smaller junctions have resistances in the kilohm range, which are easily measured, leading to the possibility of sensing and microelectronic applications.

引用

页码：249 / 252

页数：4

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