High-Speed Operation of Vertical Type Organic Transistors Utilizing Step-Edge Structures

被引：29

作者：

Takano, Tomoki ^{[1
]}

Yamauchi, Hiroshi ^{[1
]}

Iizuka, Masaaki ^{[2
]}

Nakamura, Masakazu ^{[1
]}

Kudo, Kazuhiro ^{[1
]}

机构：

[1] Chiba Univ, Grad Sch Engn, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Fac Educ, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

关键词：

THIN-FILM TRANSISTORS; STATIC INDUCTION TRANSISTOR; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; CHANNEL; FABRICATION; ARCHITECTURE;

D O I：

10.1143/APEX.2.071501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 22 条

[1] Fabrication of vertical channel top contact organic thin film transistors
Chen, Yi
Shih, Ishiang
[J]. ORGANIC ELECTRONICS, 2007, 8 (06) : 655 - 661
[2] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
Collet, J
Tharaud, O
Chapoton, A
Vuillaume, D
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1941 - 1943
[3] Dynamic characterization of charge transport in organic and polymer transistors
Dunn, Lawrence
Cobb, Brian
Reddy, Dharmendar
Dodabalapur, Ananth
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01): : 153 - 158
[4] Fast polymer integrated circuits
Fix, W
Ullmann, A
Ficker, J
Clemens, W
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (09) : 1735 - 1737
[5] High-performance, vertical-type organic transistors with built-in nanotriode arrays
Fujimoto, Kiyoshi
Hiroi, Takaaki
Kudo, Kazuhiro
Nakamura, Masakazu
[J]. ADVANCED MATERIALS, 2007, 19 (04) : 525 - +
[6] Fabrication of a vertical-type organic transistor with a planar metal base
Fujimoto, S
Nakayama, K
Yokoyama, M
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (13) : 1 - 3
[7] Kondo H., 2006, P 13 INT DISPL WORKS, P1711
[8] Schottky gate static induction transistor using copper phthalocyanine films
Kudo, K
Wang, DX
Iizuka, M
Kuniyoshi, S
Tanaka, K
[J]. THIN SOLID FILMS, 1998, 331 (1-2) : 51 - 54
[9] Device characteristics of lateral and vertical type organic field effect transistors
Kudo, K
Iizuka, M
Kuniyoshi, S
Tanaka, K
[J]. THIN SOLID FILMS, 2001, 393 (1-2) : 362 - 367
[10] KUDO K, 2008, P 8 INT M INF DISPL, P91

← 1 2 3 →