Development of silicon wafer packaging technology for deep UV LED

被引：5

作者：

Chiba, Hirofumi ^{[1
]}

Suzuki, Yukio ^{[2
]}

Yasuda, Yoshiaki ^{[1
]}

Kumagai, Mitsuyasu ^{[1
]}

Koyama, Takaaki ^{[1
]}

Tanaka, Shuji ^{[2
]}

机构：

[1] Stanley Elect CO LTD, Yokohama, Kanagawa, Japan

[2] Tohoku Univ, Grad Sch Engn, Tanaka Lab, Sendai, Miyagi, Japan

来源：

ELECTRICAL ENGINEERING IN JAPAN | 2021年 / 214卷 / 01期

关键词：

crystalline anisotropic etching; deep ultraviolet LED; hermetic sealing; temporary bonding; through‐ silicon via (TSV); wafer‐ level packaging;

D O I：

10.1002/eej.23298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a deep-ultraviolet LED (deep-UV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV-LED die mount condition.

引用

页码：62 / 68

页数：7

共 18 条

[1] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].