High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

被引：89
作者：
Disney, Don [1 ]
Letavic, Ted [2 ]
Trajkovic, Tanya [3 ]
Terashima, Tomohide [4 ]
Nakagawa, Akio [5 ]
机构：
[1] GLOBALFOUNDRIES, Santa Clara, CA 95054 USA
[2] GLOBALFOUNDRIES, Hopewell Jct, NY 12533 USA
[3] Cambridge Microelect, Cambridge CB21 5XE, England
[4] Mitsubishi Electr Corp, Fukuoka 8190192, Japan
[5] Nakagawa Consulting Off LLC, Chigasaki, Kanagawa 2530021, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
High-voltage ICs (HVICs); insulated-gate bipolar transistors (IGBTs); power ICs; power semiconductor devices; power transistors; reduced surface field (RESURF); silicon on insulator (SOI); IC PROCESS; TECHNOLOGY; LIGBTS; DEVICES; ANALOG; LDMOS;
D O I：
10.1109/TED.2016.2631125
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage ICs (HVICs) are used in many applications, including ac/dc conversion, off-line LED lighting, and gate drivers for power modules. This paper describes the technologies most commonly used in commercial HVICs, including junction-isolation, thin silicon-on-insulator (SOI), and thick SOI approaches. Emerging technologies such as thin silicon membrane are also discussed.
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页码：659 / 673
页数：15
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (03) :1161-1167
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