High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

被引：89
作者：
Disney, Don [1 ]
Letavic, Ted [2 ]
Trajkovic, Tanya [3 ]
Terashima, Tomohide [4 ]
Nakagawa, Akio [5 ]
机构：
[1] GLOBALFOUNDRIES, Santa Clara, CA 95054 USA
[2] GLOBALFOUNDRIES, Hopewell Jct, NY 12533 USA
[3] Cambridge Microelect, Cambridge CB21 5XE, England
[4] Mitsubishi Electr Corp, Fukuoka 8190192, Japan
[5] Nakagawa Consulting Off LLC, Chigasaki, Kanagawa 2530021, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
High-voltage ICs (HVICs); insulated-gate bipolar transistors (IGBTs); power ICs; power semiconductor devices; power transistors; reduced surface field (RESURF); silicon on insulator (SOI); IC PROCESS; TECHNOLOGY; LIGBTS; DEVICES; ANALOG; LDMOS;
D O I：
10.1109/TED.2016.2631125
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage ICs (HVICs) are used in many applications, including ac/dc conversion, off-line LED lighting, and gate drivers for power modules. This paper describes the technologies most commonly used in commercial HVICs, including junction-isolation, thin silicon-on-insulator (SOI), and thick SOI approaches. Emerging technologies such as thin silicon membrane are also discussed.
引用
收藏
页码：659 / 673
页数：15
相关论文
共 74 条
[1]  
Abou-Khalil MJ, 2013, PROC INT SYMP POWER, P253, DOI 10.1109/ISPSD.2013.6694464
[2]  
[Anonymous], 2006, P ISPSD, DOI DOI 10.1109/ISPSD.2006.1666145
[3]  
Appels J., 1981, U.S. Patent, Patent No. [4 292 642, 4292642]
[4]  
Appels J A., 1979, 1979 International Electron Devices Meeting, P238, DOI [DOI 10.1109/IEDM.1979.189589, 10.1109/IEDM.1979.18958946, DOI 10.1109/IEDM.1979.18958946]
[5]  
APPELS JA, 1980, PHILIPS J RES, V35, P1
[6]   High-temperature performance of SOI and bulk-silicon RESURF LDMOS transistors [J].
Arnold, E ;
Letavic, T ;
Merchant, S ;
Bhimnathwala, H .
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS, 1996, :93-96
[7]  
Bruning G., 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs. ISPSD '90 (Cat. No.90TH0304-6), P72
[8]  
Camuso G., 2014, 2014 16 EUROPEAN C P, P1, DOI [10.1109/EPE.2014.6910917, DOI 10.1109/EPE.2014.6910917]
[9]  
Chen Wai-Kai., 2006, THE VLSI HDB, VSecond
[10]  
Colak S., 1980, PESC '80 Record. IEEE Power Electronics Specialists Conference, P164
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