Admittance spectroscopy of polymer-nanoparticle nonvolatile memory devices

被引：32
作者：
Simon, D. T.
Griffo, M. S.
DiPietro, R. A.
Swanson, S. A.
Carter, S. A.
机构：
[1] Univ Calif Santa Cruz, Dept Phys, Santa Cruz, CA 95064 USA
[2] IBM Corp, Div Res, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2357560
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, as well as evidence for similar transport in the lower-conductivity "off" state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect. (c) 2006 American Institute of Physics.
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页数：3
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