Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

被引：9

作者：

Lee, Ko-Tao ^{[1
]}

Lee, Yeeu-Chang ^{[2
]}

Chang, Jenq-Yang ^{[3
]}

Gong, Jeng ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] Chung Yuan Christian Univ, Dept Mech Engn, Jhongli 320, Taiwan

[3] Natl Cent Univ, Dept Opt & Photon, Jhongli 320, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 07期

关键词：

Electroluminescence (EL); laser scribe; light-emitting diode (LED); mesh-texture; PATTERNED SAPPHIRE; LIFT-OFF; OUTPUT; BLUE;

D O I：

10.1109/LPT.2009.2013726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.

引用

页码：477 / 479

页数：3

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