Radiation hardness of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker

被引:0
作者
Dabrowski, W [1 ]
Anghinolfi, F [1 ]
Jarron, P [1 ]
Kaplon, J [1 ]
Roe, S [1 ]
Weilhammer, P [1 ]
Cindro, V [1 ]
Mandic, I [1 ]
Mikuz, M [1 ]
Kramberger, G [1 ]
Clark, A [1 ]
LaMarra, D [1 ]
Macina, D [1 ]
Zsenei, A [1 ]
Dorfan, D [1 ]
Dubbs, T [1 ]
Grillo, A [1 ]
Spencer, E [1 ]
Kudlaty, J [1 ]
Lacasta, C [1 ]
Meddeler, G [1 ]
Niggli, H [1 ]
Wolter, M [1 ]
Szczygiel, R [1 ]
机构
[1] UMM, Fac Phys & Nucl Tech, Krakow, Poland
来源
PROCEEDINGS OF THE FIFTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS | 1999年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The radiation hardness requirements of the ABCD chip are driven by the radiation levels expected in the ATLAS SCT after 10 years of LHC operation, which are 10 Mrad of total ionising dose and 2x10(14)n/cm(2) of 1 MeV eq neutron fluence for the displacement damages. The ABCD chip, comprising both analogue and digital circuitry and realised in a BiCMOS technology, is sensitive to ionisation effects as well as to displacement damages. The recent prototype of the ABCD chip, which meets all SCT requirements, has been irradiated separately with X-ray, neutrons from a nuclear reactor, and with 24 GeV protons. In the paper we present and discuss the radiation effects observed in the ABCD chip.
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页码:113 / 117
页数:5
相关论文
共 3 条
[1]  
DABROWSKI W, 1998, P 4 WORKSH EL LHC EX, P175
[2]  
1996, CERNLHCC9715
[3]  
1997, CERNLHCC9717, V2