Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

被引：5
|
作者：
Zhang, ZY [1 ]
Xu, B [1 ]
Jin, P [1 ]
Meng, XQ [1 ]
Li, CM [1 ]
Ye, XL [1 ]
Li, DB [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 03期
基金：
中国国家自然科学基金;
关键词：
atomic force microscopy; low dimensional structures; nanostructures; molecular beam epitaxy; semiconducting III-V materials; laser diodes;
D O I：
10.1016/S0022-0248(02)01309-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated the effect of InAlAs/InGaAs cap layer on the optical properties of self-assembled InAs/GaAs quantum dots (QDs). We find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of InAs QDs depend on the In composition and the thickness of thin InAlAs cap layer. Furthermore, the large energy separation of 103 meV was obtained from InAs/GaAs QDs with emission at 1.35 pm at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：304 / 308
页数：5
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