Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

被引：1
作者：
Ciosek, Jerzy
Misiuk, Andrzej
Surma, Barbara
Shchennikov, Vladimir V.
机构：
[1] Inst Elect Technol, PL-02668 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] RAS, Inst Met Phys, Ekaterinburg 62019, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 09期
关键词：
D O I：
10.1002/pssa.200566008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxygen-related defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to one or 4-steps preannealing at 720 - 1000 K under 10(5) Pa and next treated at 1170 - 1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence (PL) and microhardness measurements as well as by spectroscopic reflectrometry. Microstructure of HT-HP treated Cz-Si is dependent on nucleation centres for oxygen precipitation created by pre-annealing and on applied pressure. (c) 2006 WIELEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2254 / 2259
页数：6
相关论文
共 14 条
[1]   Optical bands related to dislocations in Si [J].
Blumenau, AT ;
Jones, R ;
Öberg, S ;
Frauenheim, T ;
Briddon, PR .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (49) :10123-10129
[2]   OXYGEN PRECIPITATION IN SILICON [J].
BORGHESI, A ;
PIVAC, B ;
SASSELLA, A ;
STELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244
[3]  
BRUGGEMAN AG, 1935, ANN PHYS-LEIPZIG, V24, P636
[4]  
CABARROCAS PR, 1996, APPL PHYS LETT, V69, P539
[5]   Prerequisite for photoluminescence D line spectra of heat-treated carbon-lean Czochralski silicon crystals [J].
Cho, KH ;
Lee, JY ;
Suh, EK ;
Kim, KW .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (1A) :1-5
[6]   Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C [J].
Emtsev, VV ;
Mudryi, AV ;
Emtsev, VV ;
Poloskin, DS ;
Oganesyan, GA .
PHYSICA B-CONDENSED MATTER, 2003, 340 :1018-1021
[7]   Characterization of different porous silicon structures by spectroscopic ellipsometry [J].
Fried, M ;
Lohner, T ;
Polgar, O ;
Petrik, P ;
Vazsonyi, E ;
Barsony, I ;
Piel, JP ;
Stehle, JL .
THIN SOLID FILMS, 1996, 276 (1-2) :223-227
[8]  
Misiuk A, 2004, EUR PHYS J-APPL PHYS, V27, P301, DOI [10.1051/epjap:2003073, 10.1051/epjap:2004073]
[9]   Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions [J].
Misiuk, A ;
Surma, HB ;
Lopez, M .
INTERNATIONAL JOURNAL OF INORGANIC MATERIALS, 2001, 3 (08) :1197-1199
[10]   Microstructure of Czochralski silicon annealed at enhanced stress conditions [J].
Misiuk, A ;
Surma, HB ;
Bak-Misiuk, J ;
Lopez, M ;
Romano-Rodriguez, A ;
Hartwig, J .
JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 328 (1-2) :90-96
12