A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3

被引：3

作者：

Lin, D. Y. ^{[1
]}

Lin, H. J. ^{[1
]}

Wu, J. S. ^{[1
]}

Chou, W. C. ^{[2
]}

Yang, C. S. ^{[3
]}

Wang, J. S. ^{[4
,5
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, Gifu 500, Taiwan

[2] Natl Chiao Tung Univ, Dept & Inst Electrophy, Hsinchu 300, Taiwan

[3] Tatung Univ, Grad Inst Electroopt Engn, Taipei 104, Taiwan

[4] Chung Yuan Christian Univ, Dept Phys, Chungli 320, Taiwan

[5] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 320, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

关键词：

alumina; ferromagnetic materials; II-VI semiconductors; magnetic epitaxial layers; molecular beam epitaxial growth; phonons; photoluminescence; plasma materials processing; reflectivity; segregation; semiconductor epitaxial layers; semimagnetic semiconductors; spectral line broadening; wide band gap semiconductors; zinc compounds; OPTICAL-PROPERTIES; ZNO; SPECTRA; ENERGY; LAYERS;

D O I：

10.1063/1.3078034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.

引用

页数：8

共 37 条

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