Improved corrosion resistance of GaN electrodes in NaCl electrolyte for photoelectrochemical hydrogen generation

被引：15
|
作者：
Tu, Ding-Hsiun [1 ]
Wang, Hsin-Chieh [2 ]
Wang, Po-Sheng [1 ]
Cheng, Wei-Chao [3 ]
Chen, Kuei-Hsien [2 ]
Wu, Chih-I. [1 ]
Chattopadhyay, Surojit [4 ]
Chen, Li-Chyong [5 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan
[2] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan
[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
[4] Natl Yang Ming Univ, Inst Biophoton, Taipei 112, Taiwan
[5] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan
来源：
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2013年 / 38卷 / 34期
关键词：
GaN; Hydrogen generation; Water splitting; Stability; Sea water; N-TYPE GAN; GALLIUM NITRIDE; WATER; OXIDE; GROWTH; PHOTOCATHODE; PHOTOANODES; OXIDATION;
D O I：
10.1016/j.ijhydene.2013.08.095
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A significant improvement in the stability of high-quality GaN films, for photoelectro chemical hydrogen generation, has been demonstrated using near neutral NaCl(aq) electrolyte instead of conventional acidic HCl(aq). The experimental results conclude that the as-grown surface oxide passivates the surface from corrosion and, therefore, leads to a higher photocurrent. Our result paves the way for the future development of stable hydrogen generation with abundant sea water and high-efficiency III-V compound semiconductors. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：14433 / 14439
页数：7
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