Photoemission study of Sn on vicinal Si(100)2x1 surface

被引:3
作者
Perälä, RE
Ollonqvist, TE
Kivitörmä, MPM
Väyrynen, IJ
机构
[1] Univ Turku, Dept Appl Phys, FIN-20014 Turku, Finland
[2] Turku Univ, Cent Hosp, Dept Oncol & Radiotherapy, FIN-20521 Turku, Finland
关键词
synchrotron radiation photoelectron spectroscopy; low energy electron diffraction (LEED); silicon; tin; vicinal single crystal surfaces; metal-semiconductor interfaces;
D O I
10.1016/S0039-6028(02)01214-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present high resolution photoemission studies of Sri on vicinal Si(1 0 0)2 x 1 Surface in submonolayer regime. Deposition of Sri on clean Si(1 0 0) surface produces an abrupt epitaxial interface having a large variety Of surface reconstructions. At room temperature at low coverages Sri dimer rows are formed. After annealing above 500 degreesC following superstructures are known to exist with increasing Sri coverage: c(4 x 4), 2 x 6, c(4 x 8), and 1 x 5. The Sn 4d core level spectra are now resolved in details displaying new components related to the different adsorption sites oil the Si(1 0 0) Surface. The spectra of the annealed phase reconstructions show components originating from dimer bonding, from bonding to the second layer, from Sit atoms in mixed Sn-Si dimers where Sn atoms have replaced one of the Si dimer pair atoms, and from adsorption onto defect sites. The photoemission results are in good agreement with the Surface geometric structures. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:213 / 217
页数:5
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