Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

被引：19

作者：

Liu, Chao ^{[1
]}

Ren, Zhiwei ^{[1
]}

Chen, Xin ^{[1
]}

Zhao, Bijun ^{[1
]}

Wang, Xingfu ^{[1
]}

Yin, Yian ^{[1
]}

Li, Shuti ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 02期

关键词：

Electron blocking layer; light emitting diodes; efficiency droop; GAN; POLARIZATION; LEDS;

D O I：

10.1109/LPT.2013.2290124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Step-graded AlGaN electron blocking layers (EBLs) have been designed to replace the original AlGaN EBL in blue light emitting diodes (LEDs). The step-graded EBL with increasing Al composition along the growth direction (IEBL) leads to inferior optical performance in the fabricated LEDs, whereas the step-graded EBL with decreasing Al composition (DEBL) results in enhanced light output power and reduced efficiency droop, compared with the original EBL. The simulation results indicate enhanced hole injection and electron confinement by DEBL, which accounts for improved performance. On the contrary, insufficient electron blocking and hole injection by IEBL lead to inferior performance.

引用

页码：134 / 137

页数：4

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