Thermoluminescence characteristics of Tl4GaIn3S8 layered single crystals

被引：3

作者：

Delice, S. ^{[1
]}

Isik, M. ^{[2
]}

Gasanly, N. M. ^{[1
]}

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey

[2] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey

来源：

PHILOSOPHICAL MAGAZINE | 2014年 / 94卷 / 02期

关键词：

defects; semiconductors; crystals; THERMALLY STIMULATED CURRENTS; TRAP DISTRIBUTION; TLINS2; TLGAS2; ENERGY;

D O I：

10.1080/14786435.2013.848303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of trapping centres in - as grown - Tl4GaIn3S8 layered single crystals were investigated in the temperature range of 10-300K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from similar to 12 to similar to 125meV by increasing the illumination temperature from 10 to 36K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292meV.

引用

页码：141 / 151

页数：11

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