Thermal Device Design for a Carbon Nanotube Terahertz Camera

被引:51
作者
Suzuki, Daichi [1 ]
Ochiai, Yuki [1 ]
Kawano, Yukio [1 ]
机构
[1] Tokyo Inst Technol, Lab Future Interdisciplinary Res Sci & Technol, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
GRAPHENE;
D O I
10.1021/acsomega.7b02032
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Terahertz (THz) wave detectors are increasingly expected to serve as key components of powerful nondestructive and noncontact inspection tools in a large variety of fields. In contrast to conventional THz detectors based on rigid solid materials, we previously developed an uncooled and bendable THz camera based on the THz-induced photothermoelectric effect of carbon nanotube (CNT) array devices and demonstrated omnidirectional THz imaging of three-dimensional curved samples. Although this development opened a pathway to flexible THz electronics, the physical parameters that determine the performance of the CNT THz camera have not been fully investigated. As a result, the thermal device design has not been optimized in terms of the camera sensitivity and spatial resolution. In this work, we studied the underlying mechanism of the THz-induced photothermoelectric effect of the CNT camera and found physical factors related to the detector performance. Through simulation and experiments, we observed that the detection sensitivity and response time strongly depend on the CNT channel width and film thickness. We further identified that the irradiated wave penetration into the CNT film through the electrode materials deteriorates the detection area, which is directly linked to the camera spatial resolution. By utilizing the improved CNT device design fabricated based on these findings, we eliminated undesired signals generated via thermal diffusion and THz wave penetration and achieved higher-sensitivity THz detection and higher imaging resolution compared to our previously reported THz camera. The presented technologies are expected to contribute to future flexible THz imaging applications and will also be applicable to other types of photothermoelectric devices.
引用
收藏
页码:3540 / 3547
页数:8
相关论文
共 32 条
[1]  
Bao W., 2012, ACS NANO, V6, P3677
[2]   Infrared Spectroscopic Imaging: The Next Generation [J].
Bhargava, Rohit .
APPLIED SPECTROSCOPY, 2012, 66 (10) :1091-1120
[3]  
Cai X, 2014, NAT NANOTECHNOL, V9, P814, DOI [10.1038/nnano.2014.182, 10.1038/NNANO.2014.182]
[4]   Photothermoelectric and Photoelectric Contributions to Light Detection in Metal-Graphene-Metal Photodetectors [J].
Echtermeyer, T. J. ;
Nene, P. S. ;
Trushin, M. ;
Gorbachev, R. V. ;
Eiden, A. L. ;
Milana, S. ;
Sun, Z. ;
Schliemann, J. ;
Lidorikis, E. ;
Novoselov, K. S. ;
Ferrari, A. C. .
NANO LETTERS, 2014, 14 (07) :3733-3742
[5]   Figure of Merit for Carbon Nanotube Photothermoelectric Detectors [J].
Erikson, Kristopher J. ;
He, Xiaowei ;
Talin, A. Alec ;
Mills, Bernice ;
Hauge, Robert H. ;
Iguchi, Takashi ;
Fujimura, Naoki ;
Kawano, Yukio ;
Kono, Junichiro ;
Leonard, Francois .
ACS NANO, 2015, 9 (12) :11618-11627
[6]   Three-dimensional ultrasound imaging [J].
Fenster, A ;
Downey, DB ;
Cardinal, HN .
PHYSICS IN MEDICINE AND BIOLOGY, 2001, 46 (05) :R67-R99
[7]   Materials for terahertz science and technology [J].
Ferguson, B ;
Zhang, XC .
NATURE MATERIALS, 2002, 1 (01) :26-33
[8]   Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel [J].
Han, Ruonan ;
Zhang, Yaming ;
Kim, Youngwan ;
Kim, Dae Yeon ;
Shichijo, Hisashi ;
Afshari, Ehsan ;
Kenneth, K. O. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (10) :2296-2308
[9]   Carbon Nanotube Terahertz Detector [J].
He, Xiaowei ;
Fujimura, Naoki ;
Lloyd, J. Meagan ;
Erickson, Kristopher J. ;
Talin, A. Alec ;
Zhang, Qi ;
Gao, Weilu ;
Jiang, Qijia ;
Kawano, Yukio ;
Hauge, Robert H. ;
Leonard, Francois ;
Kono, Junichiro .
NANO LETTERS, 2014, 14 (07) :3953-3958
[10]   X-RAY ANALYSIS OF COMPLICATED MOLECULES [J].
HODGKIN, DC .
SCIENCE, 1965, 150 (3699) :979-&