Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

被引：132

作者：

González, L

García, JM

García, R

Briones, F

Martínez-Pastor, J

Ballesteros, C

机构：

[1] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain

[2] Univ Valencia, Inst Ciencia Mat, Valencia 46071, Spain

[3] Univ Carlos III Madrid, Escuela Politecn Super, Madrid 28911, Spain

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.125952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 mu m. (C) 2000 American Institute of Physics. [S0003-6951(00)00309-0].

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页码：1104 / 1106

页数：3

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