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The effect of embedding N vacancies into g-C3N4 on the photocatalytic H2O2 production ability via H2 plasma treatment
被引:59
|作者:
Qu, Xiaoyu
[1
]
Hu, Shaozheng
[1
]
Li, Ping
[1
]
Li, Zheng
[1
]
Wang, Hui
[1
]
Ma, Hongfei
[1
]
Li, Wei
[1
]
机构:
[1] Liaoning Shihua Univ, Coll Chem Chem Engn & Environm Engn, Fushun 113001, Peoples R China
关键词:
Plasma;
Photocatalyst;
N vacancies;
Carbon nitride;
H2O2;
production;
GRAPHITIC CARBON NITRIDE;
HYDROGEN-PEROXIDE PRODUCTION;
NITROGEN PHOTOFIXATION;
NONTHERMAL PLASMA;
OXYGEN VACANCIES;
ACTIVE-SITES;
WATER;
TIO2;
NANOSHEETS;
REDUCTION;
D O I:
10.1016/j.diamond.2018.04.027
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Dielectric barrier discharge plasma was used to prepare N vacancies embedded g-C3N4 catalyst in situ under H-2 atmosphere for the first time. XRD, N-2 adsorption, UV-Vis, SEM, TEM, XPS, EIS, EPR, O-2-TPD, photocurrent and PL were used to characterize the obtained catalysts. The photocatalytic H2O2 production ability of as-prepared catalyst was investigated. The results show that, compared with traditional roasting method, H-2 plasma treatment can embed more N vacancies into g-C3N4 lattice. Nitrogen vacancies are the active centers, which can adsorb reactant oxygen molecules as well as trap photoelectrons and promote the transfer of photoelectrons from the catalyst to adsorbed oxygen molecules for the subsequent reduction reaction. This work provides a new strategy to modify g-C3N4 based catalyst.
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页码:159 / 166
页数:8
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