Co-substitution driven electronic structure modifications in Zn1-xCoxO

被引:17
作者
Vagadia, Megha [1 ]
Ravalia, Ashish [1 ]
Katba, Savan [1 ]
Solanki, P. S. [1 ]
Bapna, Komal [2 ]
Kumar, Manish [2 ]
Choudhary, R. J. [2 ]
Phase, D. M. [2 ]
Kuberkar, D. G. [1 ]
机构
[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India
[2] UGC DAE Consortium Sci Res, Indore 01, Madhya Pradesh, India
关键词
Semiconductors; Sol-gel processes; Electronic band structure; Photoelectron spectroscopies; MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; PHOTOEMISSION;
D O I
10.1016/j.jallcom.2014.04.213
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report, the studies on the electronic structure and valence band modifications in sol-gel grown Zn1-xCoxO (x = 0, 0.5 and 0.15) samples, obtained using X-ray photoelectron spectroscopy (XPS) measurements. Structural studies confirm the single phasic hexagonal wurtzite structure having space group P6(3)mc. XPS measurements of Co 2p core level indicate that, Co-ions are in +2 state in ZnO. Using valence band spectroscopy (VBS) and resonant photoemission spectroscopy (RPES) measurements, modifications in the electronic structure of Co-doped ZnO have been understood in the context of increment in the occupation of Co-3d states with Co-content which extends the VB maxima edge. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:113 / 117
页数:5
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