Co-substitution driven electronic structure modifications in Zn1-xCoxO

被引：17

作者：

Vagadia, Megha ^{[1
]}

Ravalia, Ashish ^{[1
]}

Katba, Savan ^{[1
]}

Solanki, P. S. ^{[1
]}

Bapna, Komal ^{[2
]}

Kumar, Manish ^{[2
]}

Choudhary, R. J. ^{[2
]}

Phase, D. M. ^{[2
]}

Kuberkar, D. G. ^{[1
]}

机构：

[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India

[2] UGC DAE Consortium Sci Res, Indore 01, Madhya Pradesh, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 610卷

关键词：

Semiconductors; Sol-gel processes; Electronic band structure; Photoelectron spectroscopies; MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; PHOTOEMISSION;

D O I：

10.1016/j.jallcom.2014.04.213

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report, the studies on the electronic structure and valence band modifications in sol-gel grown Zn1-xCoxO (x = 0, 0.5 and 0.15) samples, obtained using X-ray photoelectron spectroscopy (XPS) measurements. Structural studies confirm the single phasic hexagonal wurtzite structure having space group P6(3)mc. XPS measurements of Co 2p core level indicate that, Co-ions are in +2 state in ZnO. Using valence band spectroscopy (VBS) and resonant photoemission spectroscopy (RPES) measurements, modifications in the electronic structure of Co-doped ZnO have been understood in the context of increment in the occupation of Co-3d states with Co-content which extends the VB maxima edge. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：113 / 117

页数：5

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