Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion

被引：18

作者：

Xu, Xuejun ^{[1
]}

Wang, Xiaoxin ^{[2
]}

Nishida, Keisuke ^{[1
]}

Takabayashi, Koki ^{[1
]}

Sawano, Kentarou ^{[1
]}

Shiraki, Yasuhiro ^{[1
]}

Li, Haofeng ^{[2
]}

Liu, Jifeng ^{[2
]}

Maruizumi, Takuya ^{[1
]}

机构：

[1] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

[2] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期

关键词：

ROOM-TEMPERATURE; LIGHT-EMISSION; GE; SI; LASER; DEVICES;

D O I：

10.7567/APEX.8.092101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct band gap optical gain of tensile-strained, highly n-doped germanium on silicon is investigated by femtosecond ultrafast transmittance spectroscopy. A germanium film with 0.22% tensile strain is grown on a silicon substrate by using molecular beam epitaxy. An activated doping concentration up to 4 x 10(19) cm(-3) is achieved by phosphorus diffusion from a spin-on dopant source. The transmittance of the germanium film is clearly increased upon increasing the pump power. A peak optical gain of up to 5300 cm(-1) around 1.7 mu m and a gain spectrum broader than 300 nm are obtained. These results show a simple yet promising way to realize gain medium for monolithic-integrated germanium lasers. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

共 9 条

[1] Analysis of optical gain threshold in n-doped and tensile-strained germanium heterostructure diodes
Prost, M.
El Kurdi, M.
Aniel, F.
Zerounian, N.
Sauvage, S.
Checoury, X.
Boeuf, F.
Boucaud, P.
JOURNAL OF APPLIED PHYSICS, 2015, 118 (12)
[2] Tensile-strained, Heavily N-doped Germanium-On-Insulator for Light Emitting Devices on Silicon
Xu, Xuejun
Nishida, Keisuke
Sawano, Kentarou
Maruizumi, Takuya
Shiraki, Yasuhiro
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
[3] Optical gain in single tensile-strained germanium photonic wire
de Kersauson, M.
El Kurdi, M.
David, S.
Checoury, X.
Fishman, G.
Sauvage, S.
Jakomin, R.
Beaudoin, G.
Sagnes, I.
Boucaud, P.
OPTICS EXPRESS, 2011, 19 (19): : 17925 - 17934
[4] Band structure and optical gain of tensile-strained germanium based on a 30 band k•p formalism
El Kurdi, Moustafa
Fishman, Guy
Sauvage, Sebastien
Boucaud, Philippe
JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
[5] High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
Jakomin, R.
de Kersauson, M.
El Kurdi, M.
Largeau, L.
Mauguin, O.
Beaudoin, G.
Sauvage, S.
Ossikovski, R.
Ndong, G.
Chaigneau, M.
Sagnes, I.
Boucaud, P.
APPLIED PHYSICS LETTERS, 2011, 98 (09)
[6] Theoretical analysis of optical gain in uniaxial tensile strained and n+-doped Ge/GeSi quantum well
Jiang, Jialin
Sun, Junqiang
OPTICS EXPRESS, 2016, 24 (13): : 14525 - 14537
[7] Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source
Luong, T. K. P.
Ghrib, A.
Dau, M. T.
Zrir, M. A.
Stoffel, M.
Le Thanh, V.
Daineche, R.
Le, T. G.
Heresanu, V.
Abbes, O.
Petit, M.
El Kurdi, M.
Boucaud, P.
Rinnert, H.
Murota, J.
THIN SOLID FILMS, 2014, 557 : 70 - 75
[8] Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser
Okumura, Tadashi
Oda, Katsuya
Kasai, Junichi
Sagawa, Misuzu
Suwa, Yuji
OPTICS EXPRESS, 2016, 24 (09): : 9132 - 9139
[9] A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells
Jiang, Yu
Xu, Yun
Wu, Haoyue
Li, Jian
Bai, Lin
Chen, Huamin
Zhang, Jiushuang
Song, Guofeng
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (47)

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