Ab-initio calculations of electronic, transport, and structural properties of boron phosphide

被引:28
作者
Ejembi, J. I.
Nwigboji, I. H.
Franklin, L.
Malozovsky, Y.
Zhao, G. L.
Bagayoko, D. [1 ]
机构
[1] Southern Univ, Dept Phys, Baton Rouge, LA 70813 USA
基金
美国国家科学基金会;
关键词
ORTHOGONALIZED-PLANE-WAVE; III-V; BAND-STRUCTURE; OPTICAL-PROPERTIES; GROUND-STATE; DIAMOND-LIKE; CUBIC BN; BP; SEMICONDUCTORS; ENERGY;
D O I
10.1063/1.4894692
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present results from ab-initio, self-consistent density functional theory calculations of electronic and related properties of zinc blende boron phosphide (zb-BP). We employed a local density approximation potential and implemented the linear combination of atomic orbitals formalism. This technique follows the Bagayoko, Zhao, and Williams method, as enhanced by the work of Ekuma and Franklin. The results include electronic energy bands, densities of states, and effective masses. The calculated band gap of 2.02 eV, for the room temperature lattice constant of a = 4.5383 angstrom, is in excellent agreement with the experimental value of 2.02 +/- 0.05 eV. Our result for the bulk modulus, 155.7 GPa, agrees with experiment (152-155 GPa). Our predictions for the equilibrium lattice constant and the corresponding band gap, for very low temperatures, are 4.5269 angstrom and 2.01 eV, respectively. (C) 2014 AIP Publishing LLC.
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页数:6
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