Deconvoluting the Mechanism of Microwave Annealing of Block Copolymer Thin Films

被引:69
作者
Jin, Cong [1 ,2 ]
Murphy, Jeffrey N. [1 ,2 ]
Harris, Kenneth D. [1 ]
Buriak, Jillian M. [1 ,2 ]
机构
[1] Natl Inst Nanotechnol, Edmonton, AB T6G 2M9, Canada
[2] Univ Alberta, Dept Chem, Edmonton, AB T6G 2G2, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
block copolymer; self-assembly; microwave irradiation; thermal annealing; defect density; thin film; patterning; PS-B-PMMA; DIBLOCK COPOLYMER; ORIENTATIONAL ORDER; PRECISE CONTROL; NANOSTRUCTURES; LITHOGRAPHY; DEPOSITION; PATTERNS; NANOLITHOGRAPHY; MORPHOLOGY;
D O I
10.1021/nn5009098
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The self-assembly of block copolymer (BCP) thin films is a versatile method for producing periodic nanoscale patterns with a variety of shapes. The key to attaining a desired pattern or structure is the annealing step undertaken to facilitate the reorganization of nanoscale phase-segregated domains of the BCP on a surface. Annealing BCPs on silicon substrates using a microwave oven has been shown to be very fast (seconds to minutes), both with and without contributions from solvent vapor. The mechanism of the microwave annealing process remains, however, unclear. This work endeavors to uncover the key steps that take place during microwave annealing, which enable the self-assembly process to proceed. Through the use of in situ temperature monitoring with a fiber optic temperature probe in direct contact with the sample, we have demonstrated that the silicon substrate on which the BCP film is cast is the dominant source of heating if the doping of the silicon wafer is sufficiently low. Surface temperatures as high as 240 degrees C are reached in under 1 min for lightly doped, high resistivity silicon wafers (n- or p-type). The influence of doping, sample size, and BCP composition was analyzed to rule out other possible mechanisms. In situ temperature monitoring of various polymer samples (PS, P2VP, PMMA, and the BCPs used here) showed that the polymers do not heat to any significant extent on their own with microwave irradiation of this frequency (2.45 GHz) and power (similar to 600 W). It was demonstrated that BCP annealing can be effectively carried out in 60s on non-microwave-responsive substrates, such as highly doped silicon, indium tin oxide (ITO)-coated glass, glass, and Kapton, by placing a piece of high resistivity silicon wafer in contact with the sample-in this configuration, the silicon wafer is termed the heating element. Annealing and self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and polystyrene-block-poly(methyl methaaylate) (PS-b-PMMA) BCPs into horizontal cylinder structures were shown to take place in under 1 min, using a silicon wafer heating element, in a household microwave oven. Defect densities were calculated and were shown to decrease with higher maximum obtained temperatures. Conflicting results in the literature regarding BCP annealing with microwave are explained in light of the results obtained In this study.
引用
收藏
页码:3979 / 3991
页数:13
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