共 24 条
Mo/Si multilayers with different barrier layers for applications as extreme ultraviolet mirrors
被引:135
|作者:
Braun, S
Mai, H
Moss, M
Scholz, R
Leson, A
机构:
[1] Fraunhofer Inst Werkstoff & Strahltech, D-01277 Dresden, Germany
[2] Max Planck Inst Mikrostrukturphys Halle, D-06120 Halle Saale, Germany
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
2002年
/
41卷
/
6B期
关键词:
MO/Si;
C;
B4C;
barrier layers;
EUV;
multilayer;
mirror;
optics;
magnetron sputter deposition;
PLD;
D O I:
10.1143/JJAP.41.4074
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Pulsed laser deposition (PLD) and magnetron sputter deposition (MSD) have been used to prepare different types of Mo/Si multilayers for the extreme ultraviolet (EUV) spectral range. In the case of PLD prepared Mo/Si multilayers the deposition of 0.3-0.5 nm thick carbon barrier layers at the interfaces leads to a substantial improvement of the interface quality, This can be deduced from Cu-Kalpha reflectivity measurements and HRTEM observations. Consequently the EUV reflectivity has been substantially increased. For pure Mo/Si-multilayers prepared by MSD the deposition parameters hake been optimized so that a normal incidence reflectivity of R-EUV = 68.7% could be realized. Although this is one of the best experimental results achieved so far, there is still a gap between this experimental value and the theoretical limit (R-EUV = 75.5%). One of the main reasons for this discrepancy is the formation of intermixing zones at the interfaces. With B4C and C barrier layers at the interface,, interdiffusion can be reduced. The resulting EUV reflectivity of this new type of EUV multilayers is 69.8% (lambda = 13,42 nm, alpha = 1.5degrees) and 71.4% (lambda = 12.52 nm, alpha = 22.5degrees).
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页码:4074 / 4081
页数:8
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