Study on Fabrication and Fast Switching of High Voltage SiC JFET

被引：0

作者：

Chen, Gang ^{[1
,2
]}

Bai, Song ^{[1
,2
]}

Huang, Runhua ^{[2
]}

Tao, Yonghong ^{[2
]}

Lu, Ao ^{[2
]}

机构：

[1] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing, Jiangsu, Peoples R China

[2] Nanjing Elect Devices Inst, Nanjing, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND ENERGY ENGINEERING | 2014年 / 827卷

关键词：

SiC; JFET; Ohmic; Trench;

D O I：

10.4028/www.scientific.net/AMR.827.282

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse I-V characteristics up to 4500V (VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136ns at room temperature under DC voltage of 600V is successfully demonstrated.

引用

页码：282 / +

页数：3

共 8 条

[1]

Chen Gang, 2012, APPL MECH MAT, V229-231, P824

[2]

Harada Katsuhiko, 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P176, DOI 10.1109/IPEC.2010.5543853

[3]

Round S., 2005, IEEE REC IND APPL C, P410

[4] High-Frequency Switching of SiC High-Voltage LJFET [J].

Sheng, Kuang ;

Zhang, Yongxi ;

Yu, Lianochun ;

Su, Ming ;

Zhao, Jian H. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (1-2) :271-277

[5]

Stewart E J., 2007, P 19 INT S POW SEM D

[6]

Treu M., 2007, P 42 IND APPL C, P324

[7] 4,340V, 40 mΩcm2 normally-off 4H-SiC VJFET [J].

Zhao, JH ;

Fursin, L ;

Alexandrov, P ;

Li, X ;

Weiner, M .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :1161-1164

[8] Design, fabrication and application of 4H-SiC trenched-and-implanted vertical JFETs [J].

Zhao, Jian H. ;

Alexandrov, Petre ;

Li, Yuzhu ;

Li, Larry ;

Sheng, Kuang ;

Lebron-Velilla, Ramon .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :1191-1194

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