Techniques for reliability analysis of MEMS RF switch

被引：28

作者：

DeNatale, J ^{[1
]}

Mihailovich, R ^{[1
]}

Waldrop, J ^{[1
]}

机构：

[1] Rockwell Sci Co, Thousand Oaks, CA 91360 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MEMS switch technology represents a key enabling element for advanced RF systems. These devices provide extremely low loss, high linearity, and broad bandwidth relative to traditional semiconductor switches. A significant impediment to fully realizing these benefits in deployed systems is their reliability under high cycle numbers. Due to their low force actuation and multi-physics operation, the reliability of MEMS contact switches may be impacted by a broad range of different mechanisms. Thus, a key component of the reliability improvement process is the separation and identification of reliability-limiting processes. A number of experimental methods have been developed to support these determinations, and the application of one permitting contact response measurement is presented.

引用

页码：116 / 117

页数：2