Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes - Comment

被引：5
作者：
Bhan, RK
Dhar, V
Chaudhury, PK
Basu, PK
Warrier, AVR
机构：
[1] Solid State Physics Laboratory, Delhi-110054, Lucknow Road
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 17期
关键词：
D O I：
10.1063/1.116165
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
[No abstract available]
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页码：2453 / 2454
页数：2
相关论文
共 7 条
[1]   TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J].
ANDERSON, WW .
INFRARED PHYSICS, 1977, 17 (02) :147-164
[2]   ELECTRICAL-PROPERTIES OF EPITAXIALLY GROWN CDTE PASSIVATION FOR LONG-WAVELENGTH HGCDTE PHOTODIODES [J].
BAHIR, G ;
ARIEL, V ;
GARBER, V ;
ROSENFELD, D ;
SHER, A .
APPLIED PHYSICS LETTERS, 1994, 65 (21) :2725-2727
[3]   CALCULATION OF TUNNELING CURRENTS IN (HG,CD)TE PHOTODIODES USING A 2-SIDED JUNCTION POTENTIAL [J].
BECK, WA ;
BYER, NE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :292-297
[4]  
BHAN RK, 1990, SEMICOND SCI TECH, V5, P1093, DOI 10.1088/0268-1242/5/11/004
[5]   ZENER CURRENT CONTRIBUTION TO THE RESISTANCE-AREA PRODUCT OF 8-MU-M TO 14-MU-M HG1-XCDXTE PHOTODIODES [J].
GOPAL, V ;
DHAR, V .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1489-1493
[6]   TUNNELING CURRENTS IN REVERSE BIASED HG1-XCDXTE PHOTODIODES [J].
NEMIROVSKY, Y ;
BLOOM, I .
INFRARED PHYSICS, 1987, 27 (03) :143-151
[7]   ANALYSIS OF THE R0A PRODUCT IN N+-P HG1-XCDXTE PHOTODIODES [J].
ROGALSKI, A .
INFRARED PHYSICS, 1988, 28 (03) :139-153
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