Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys

被引：0
|
作者：
Olikh, YM [1 ]
Savkina, RK [1 ]
Vlasenko, OI [1 ]
机构：
[1] NASU, Inst Semicond Phys, UA-252028 Kiev, Ukraine
来源：
FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 1999年 / 3890卷
关键词：
II-VI semiconductors; ultrasonic; transport properties; acoustodynamic influence; p -> n conductivity conversion;
D O I：
10.1117/12.368415
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic (approximate to 6MHz) are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration ( increasing in n-type and decreasing in p-type) are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes (electrical activation/disactivation of the crystals defects, reducing of alloy scattering) are analyzed. At first the phenomenon of the acoustostimulated p-->n conversion had been detected in p-CdxHg1-xTe at T<120 K.
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页码：542 / 547
页数：6
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