Acoustodynamic influence on electronic properties of CdxHg1-xTe alloys

被引：0

作者：

Olikh, YM ^{[1
]}

Savkina, RK ^{[1
]}

Vlasenko, OI ^{[1
]}

机构：

[1] NASU, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 1999年 / 3890卷

关键词：

II-VI semiconductors; ultrasonic; transport properties; acoustodynamic influence; p -> n conductivity conversion;

D O I：

10.1117/12.368415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic (approximate to 6MHz) are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration ( increasing in n-type and decreasing in p-type) are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes (electrical activation/disactivation of the crystals defects, reducing of alloy scattering) are analyzed. At first the phenomenon of the acoustostimulated p-->n conversion had been detected in p-CdxHg1-xTe at T<120 K.

引用

页码：542 / 547

页数：6

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