Thermoelectric Figure of Merit Calculations for Nanowires - The Moderate Confinement Regime

被引:0
作者
Cornett, Jane [1 ]
Rabin, Oded [1 ,2 ]
机构
[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
来源
THERMOELECTRIC MATERIALS 2010 - GROWTH, PROPERTIES, NOVEL CHARACTERIZATION METHODS AND APPLICATIONS | 2010年 / 1267卷
关键词
THERMAL-CONDUCTIVITY;
D O I
10.1557/PROC-1267-DD05-10
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report room temperature ZT calculations for silicon and indium antimonide nanowires of varying radii. Interestingly, some systems deviate significantly from the anticipated trend of ZT vs. radius. The InSb results are particularly remarkable due to the non-monotonic relationship seen between n-type ZT and wire radius; where typically we expect to see only a decrease with increasing radius, for InSb ZT increases between 20 and 100 nm wire radii. This is thought to be due to the high level of degeneracy of subbands for larger nanowire radii. These results indicate that the monotonic relationship between ZT and wire radius observed under strong confinement conditions cannot be assumed, but must be tested on a case-by-case basis for each materials system.
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页数:6
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