Implementation of highly stable microcrystalline silicon by VHFPECVD at high deposition rate in micromorph tandem cells

被引:0
作者
Rath, Jatindra. K. [1 ]
Verkerk, Arjan [1 ]
Franken, Ronald [1 ]
van Bommel, Caspar [1 ]
van der Werf, Karine [1 ]
Gordijn, Aad [1 ]
Schropp, Ruud [1 ]
机构
[1] Univ Utrecht, Fac Sci, SID Phys Devices, POB 80000, NL-3508 GA Utrecht, Netherlands
来源
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2 | 2006年
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暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have shown here the development of device quality microcrystalline materials with a wide range of growth rates varying in one order from a moderate deposition rate of 0.45nm/s to a considerable high deposition rate of 4.5nm/s. On the one hand, we have achieved a record high stabilized efficiency of 10% for microcrystalline silicon solar cells in a superstrate configuration at a deposition rate of 0.45nm/s, on the other hand, at a high deposition rate of 4.5nm/s we have shown a very promising stabilized efficiency of 6.7%. The monitoring tools to achieve such materials, such as in situ optical emission spectroscopy and a new parameter called "gas utilisation parameter" have been described. In this article we have reported results of the tandem "micromorph" cell with 11.4% stabilized efficiency using standard amorphous silicon (at a deposition rate of similar to 0.2nm/s) for the top cell. We also propose high deposition rate HWCVD proto-Si:H as a possible candidate for the top cell in combination with our high growth rate microcrystalline silicon bottom cell.
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页码:1473 / +
页数:2
相关论文
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