Laser Induced Damage Thresholds of KTiOPO4 and Rb:KTiOPO4 at 1 μm and 2 μm

被引：0

作者：

Coetzee, R. S. ^{[1
]}

Thilmann, N. ^{[1
]}

Zukauskas, A. ^{[1
]}

Canalias, C. ^{[1
]}

Pasiskevicius, V. ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Appl Phys, Roslagstullsbacken 21, S-10691 Stockholm, Sweden

来源：

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年

关键词：

ZNGEP2;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimum design of high-energy parametric down-conversion schemes mandate investigation of nanosecond laser-induced damage threshold in KTiOPO4 and Rb:KTiOPO4 at 1.064 mu m and 2 mu m. A surface damage threshold of 10 J/cm(2) at 2 mu m was determined for both materials.

引用

页数：2

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