The energy band gap of cadmium sulphide

被引：33
作者：
Boakye, F
Nusenu, D
机构：
[1] Department of Physics, University of Science and Technology, Kumasi
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 04期
关键词：
semiconductors; electronic band structure;
D O I：
10.1016/S0038-1098(97)00012-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The energy band gap of cadmium sulphide has been determined for the bulk specimen and films prepared by thermal evaporation on glass substrates in vacuum. The energy band gap of the specimens were deduced from their temperature variation of their resistance in the intrinsic range. The results reveal higher energy gaps in the films than in the bulk specimen. The energy gap of the films increases from 2.46 eV typical of the bulk value to 3.24 eV as the substrate temperature is reduced from 200 to 30 degrees C. The high energy gap at low substrate temperatures may be interpreted as due to a distorted structure in the cadmium sulphide film. (C) 1997 Elsevier Science Ltd.
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收藏
页码：323 / 326
页数：4
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