Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals

被引：73
作者：
Xiong, Puxian [1 ,2 ,3 ]
Li, Yuanyuan [1 ,2 ,3 ]
Peng, Mingying [1 ,2 ,3 ]
机构：
[1] South China Univ Technol, China Germany Res Ctr Photon Mat & Device, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[2] South China Univ Technol, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Sch Phys, Guangzhou 510641, Guangdong, Peoples R China
[3] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
来源：
ISCIENCE | 2020年 / 23卷 / 10期
基金：
中国国家自然科学基金;
关键词：
NIR PHOTOLUMINESCENCE; SPECTROSCOPIC PROPERTIES; SPECTRAL PROPERTIES; SUBVALENT BISMUTH; MONOCATION BI+; OXIDE GLASSES; BAND EMISSION; CENTERS; IMPURITY; PHOTOEMISSION;
D O I：
10.1016/j.isci.2020.101578
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Bismuth (Bi)-doped materials are capable of exhibiting broadband near-infrared (NIR) luminescence in 1,000-1,700 nm; driven by the potential use in lasers and broadband optical amplifiers for modern fiber communication systems, Bi-activated NIR luminescencent glasses and related devices have attracted much attention. Compared with glass systems, Bi-doped crystals as gain media usually have more regular crystal structures to produce stronger NIR signals, and developing such materials is highly desirable. Regarding the recent advances in Bi-doped NIR crystals, here, for the first time, we summarized such crystals listed as two main categories of halogen and oxide compounds. Then, by comparing the substitution site, coordination environment, emission and excitation luminescence peaks, emitting center species, and decay times of these known Bibased NIR crystals, discussion on how to design Bi-doped NIR crystals is included. Finally, the key challenges and perspectives of Bi-doped NIR crystals are also presented. It is hoped that this review could offer inspiration for the further development of Bi-doped NIR luminescent crystals and exploit its potential applications.
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页数：26
相关论文
共 62 条
[41]   Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals [J].
Su, Liangbi ;
Zhao, Hengyu ;
Li, Hongjun ;
Zheng, Lihe ;
Ren, Guohao ;
Xu, Jun ;
Ryba-Romanowski, Witold ;
Lisiecki, Radoslaw ;
Solarz, Piotr .
OPTICS LETTERS, 2011, 36 (23) :4551-4553
[42]   Spectroscopic properties and near-infrared broadband luminescence of Bi-doped SrB4O7 glasses and crystalline materials [J].
Su, Liangbi ;
Zhou, Peng ;
Yu, Jun ;
Li, Hongjun ;
Zheng, Lihe ;
Wu, Feng ;
Yang, Yan ;
Yang, Qiuhong ;
Xu, Jun .
OPTICS EXPRESS, 2009, 17 (16) :13554-13560
[43]   Recent advances in bismuth activated photonic materials [J].
Sun, Hong-Tao ;
Zhou, Jiajia ;
Qiu, Jianrong .
PROGRESS IN MATERIALS SCIENCE, 2014, 64 :1-72
[44]   Optical frequency metrology [J].
Udem, T ;
Holzwarth, R ;
Hänsch, TW .
NATURE, 2002, 416 (6877) :233-237
[45]   Luminescent properties of Bi-doped polycrystalline KAlCl4 [J].
Veber, A. A. ;
Romanov, A. N. ;
Usovich, O. V. ;
Fattakhova, Z. T. ;
Haula, E. V. ;
Korchak, V. N. ;
Trusov, L. A. ;
Kazin, P. E. ;
Sulimov, V. B. ;
Tsvetkov, V. B. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2012, 108 (04) :733-736
[46]   The spectral properties and the NIR photoluminescence of univalent bismuth Bi+ in RbAlCl4, CsAlCl4, RbMgCl3, CsMgCl3, KCdCl3 and RbCdCl3 crystal phases [J].
Vtyurina, D. N. ;
Romanov, A. N. ;
Veber, A. A. ;
Fattakhova, Z. T. ;
Antonov, A. A. ;
Tsvetkov, V. B. ;
Korchak, V. N. .
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B, 2016, 10 (03) :388-393
[47]  
Wang L., 2018, CONCR CEM PROD, V7, P1
[48]   Ultra-broadband red to NIR photoemission from multiple bismuth centers in Sr2B5O9Cl:Bi crystal [J].
Wang, Xiu ;
Xu, Shanhui ;
Yang, Zhongmin ;
Peng, Mingying .
OPTICS LETTERS, 2019, 44 (19) :4821-4824
[49]  
Wei Y., 2020, CHEM MATER, DOI [10.1021/acs.chemmater.0c02814, DOI 10.1021/ACS.CHEMMATER.0C02814.]
[50]   LUMINESCENCE OF S2 IONS IN CSCDBR3 AND CSMGCL3 [J].
WOLFERT, A ;
BLASSE, G .
JOURNAL OF SOLID STATE CHEMISTRY, 1984, 55 (03) :344-352
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