Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

被引：5

作者：

Qu Quan-yan ^{[1
,2
]}

Qiu Wan-qi ^{[1
]}

Zeng De-chang ^{[1
]}

Liu Zhong-wu ^{[1
]}

Dai Ming-jiang ^{[3
]}

Zhou Ke-song ^{[3
]}

机构：

[1] S China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Peoples R China

[2] Guangdong Inst Special Equipments Inspect & Super, Guangzhou 510655, Guangdong, Peoples R China

[3] Guangzhou Res Inst Nonferrous Met, Guangzhou 510651, Guangdong, Peoples R China

来源：

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2009年 / 19卷 / 01期

基金：

中国国家自然科学基金;

关键词：

diamond film; microstructure; thermal conductivity; DC arc plasma jet CVD; GROWTH-MECHANISM; THIN-FILMS;

D O I：

10.1016/S1003-6326(08)60240-X

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy (SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K.cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 degrees C due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

引用

页码：131 / 137

页数：7

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