Low-Power, Low-Phase-Noise Gm-Boosted 10-GHz VCO With Center-Tap Transformer and Stacked Transistor

被引:17
|
作者
Lee, Hee Sung [1 ]
Kang, Dong Min [1 ]
Cho, Seong Jun [1 ]
Byeon, Chul Woo [2 ]
Park, Chul Soon [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea
[2] Wonkwang Univ, Dept Elect Engn, Iksan 54538, South Korea
基金
新加坡国家研究基金会;
关键词
CMOS; LC oscillator; low phase noise; low power; 10; GHz; voltage-controlled oscillator;
D O I
10.1109/TCSII.2019.2945123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a low-power-consuming and low-phase-noise 10 GHz voltage-controlled oscillator (VCO) using the 65 nm CMOS technology. We propose a new structure for the VCO using a center-tap transformer and stacked transistor, which realizes negative gm-boosting to improve the phase noise and start-up conditions. The measured output frequency range of the designed VCO with a binary-weighted 3 bit capacitor bank is 9.66 to 11.07 GHz. The proposed VCO demonstrates a measured phase noise of -115.4 dBc/Hz at a 1 MHz offset frequency. To the best of our knowledge, compared to previously reported 10 GHz VCOs, the proposed circuit achieves the lowest phase noise. The proposed VCO achieves a power consumption of 2.7 mW, which reveals figure of merit and figure of merit with frequency tuning values as low as -191.4 and -194.1 dBc/Hz, respectively, and also the lowest value among state-of-the-art 10 GHz VCOs.
引用
收藏
页码:1710 / 1714
页数:5
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