Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

被引：4

作者：

Lutsenko, E. V. ^{[1
]}

Rzheutski, M. V. ^{[1
]}

Pavlovskii, V. N. ^{[1
]}

Yablonskii, G. P. ^{[1
]}

Alanzi, M. ^{[2
]}

Hamidalddin, A. ^{[2
]}

Alyamani, A. ^{[2
]}

Mauder, C. ^{[3
]}

Kalisch, H. ^{[4
]}

Reuters, B. ^{[4
]}

Heuken, M. ^{[3
,4
]}

Vescan, A. ^{[4
]}

Naresh-Kumar, G. ^{[5
]}

Trager-Cowan, C. ^{[5
]}

机构：

[1] Natl Acad Sci Belarus, BI Stepanov Inst Phys, Minsk 220072, BELARUS

[2] Natl Nanotechnol Ctr, KACST, Riyadh 11442, Saudi Arabia

[3] AIXTRON SE, D-52134 Herzogenrath, Germany

[4] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany

[5] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 434卷

关键词：

Defects; Stresses; X-ray diffraction; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; 11(2)OVER-BAR0 GAN; MICROSTRUCTURE; POLARIZATION; TRANSITIONS; SAPPHIRE; EMISSION; DEFECTS; STRAIN; GROWTH;

D O I：

10.1016/j.jcrysgro.2015.10.036

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The optical and structural properties of m-plane GaN layers grown by metal organic vapor phase epitaxy on LiAlO2 (100) substrates were investigated. Temperature-dependent and time-resolved photoluminescence (PL), X-ray diffraction and Raman scattering measurements were performed to analyze the correlation of the sample properties with the density of l(1)-type basal-plane stacking faults (BSFs). Electron channeling contrast imaging was used to reveal and calculate the density of BSFs reaching the surface of an m-plane GaN/LiAlO2 layer. It was shown that a local increase of BSF density in the investigated samples results in a rise of the total PL efficiency at low temperatures because of the localization of excitons at BSFs and, therefore, a suppression of their diffusion to nonradiative centers. Parameters of time decay and temperature quenching of the BSF-related PL band were determined. A correlation of both epsilon(xx) and epsilon(ZZ) strain components with the BSFs and crystal mosaicity was observed, and possible reasons of this correlation are discussed. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：62 / 66

页数：5

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