SIMS analysis in thin semiconductor films

被引：0
作者：
Dupuy, JC [1 ]
机构：
[1] Inst Natl Sci Appl, Phys Mat Lab, UMR 5511, F-69621 Villeurbanne, France
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1999年 / 54卷 / 292期
关键词：
secondary ions mass spectrometry (SIMS); depth profiling; depth resolution; microelectronics; silicon;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ion microprobes capabilities are widely used in the field of microelectronics : in an homogeneous matrix, the analysis of very weak concentrations leads to quantitative result with a high signal dynamics, an excellent detection limit, and a good depth resolution. Some examples are presented in an view to illustrate the analysis methodology; the ultimate SIMS performances, the limitations, and the so induced research tracks are pointed out.
引用
收藏
页码：160 / +
页数：33
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