Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

被引：14

作者：

Tien, Ching-Ho ^{[1
]}

Chen, Ken-Yen ^{[1
]}

Hsu, Chen-Peng ^{[2
]}

Horng, Ray-Hua ^{[3
,4
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 21期

关键词：

EFFICIENCY; PERFORMANCE; LEDS;

D O I：

10.1364/OE.22.0A1462

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did. (C) 2014 Optical Society of America

引用

页码：A1462 / A1468

页数：7

共 13 条

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