Zn vacancy induced green luminescence on non-polar surfaces in ZnO nanostructures

被引：148

作者：

Fabbri, F. ^{[1
]}

Villani, M. ^{[1
]}

Catellani, A. ^{[1
,2
]}

Calzolari, A. ^{[2
]}

Cicero, G. ^{[1
,3
]}

Calestani, D. ^{[1
]}

Calestani, G. ^{[4
]}

Zappettini, A. ^{[1
]}

Dierre, B. ^{[5
]}

Sekiguchi, T. ^{[5
]}

Salviati, G. ^{[1
]}

机构：

[1] IMEM CNR Inst, I-43124 Parma, Italy

[2] CNR NANO, Ist Nanosci, I-41125 Modena, Italy

[3] Politecn Torino, Dipartimento Sci Applicata & Tecnol, Turin, Italy

[4] Univ Parma, Dipartimento Chim GIAF, I-43100 Parma, Italy

[5] Natl Inst Mat Sci, Adv Elect Mat Ctr, Nano Device Characterizat Grp, Tsukuba, Ibaraki, Japan

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

关键词：

1ST-PRINCIPLES CALCULATIONS; NANOROD ARRAYS; GROWTH; DEVICES; IMPURITIES; NANOWIRES; BAND;

D O I：

10.1038/srep05158

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Although generally ascribed to the presence of defects, an ultimate assignment of the different contributions to the emission spectrum in terms of surface states and deep levels in ZnO nanostructures is still lacking. In this work we unambiguously give first evidence that zinc vacancies at the (1010) nonpolar surfaces are responsible for the green luminescence of ZnO nanostructures. The result is obtained by performing an exhaustive comparison between spatially resolved cathodoluminescence spectroscopy and imaging and ab initio simulations. Our findings are crucial to control undesired recombinations in nanostructured devices.

引用

页数：6

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