The Enhancement of the Resistance Window of TaN/GeTe/Cu Device by Controlling GeTe Film Structure

被引：4

作者：

Choi, Sang-Jun ^{[1
]}

Lee, Jung-Hyun ^{[2
]}

Yang, Woo-Young ^{[2
]}

Kim, Tae-Wan ^{[3
]}

Kim, Ki-Hong ^{[4
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Device Architecture Lab, Yongin 446712, South Korea

[2] Samsung Elect Co Ltd, SAIT, Corp Technol Operat, NF Grp, Yongin 446712, South Korea

[3] Sejong Univ, Dept Adv Mat Engn, Seoul 143747, South Korea

[4] Samsung Elect Co Ltd, SAIT, Corp Technol Operat, AE Grp, Yongin 446712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Cone-type column; Cu migration; GeTe; nonvolatile; switching; voids;

D O I：

10.1109/LED.2009.2015689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TaN/GeTe/Cu devices showed a switching behavior and a considerable increase in the on/off ratio due to GeTe microstructural changes. The Cu diffusion to the GeTe should be the origin of the switching behavior of the prepared devices, which indicates that the conductive bridging characteristics could be obtained even when using a pure GeTe solid electrolyte. The structural characterization suggested that voids are the main diffusion path of metallic bridges and that the electrical resistance of the ON state is dependent on the quantity of voids in the GeTe film. We also found a method for controlling the quantity of voids in a solid electrolyte.

引用

页码：451 / 453

页数：3

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