Effect of temperature on the binding energy of excited states in a ridge quantum wire

被引：40

作者：

Khordad, R. ^{[1
]}

机构：

[1] Univ Yasuj, Dept Phys, Yasuj 75914353, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 04期

关键词：

Binding energy; V-groove; Quantum wires; Impurity; Temperature; HYDROGENIC IMPURITY STATES; WELL WIRES; MAGNETIC-FIELD; DONOR IMPURITY; ELECTRON; DOTS;

D O I：

10.1016/j.physe.2008.10.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we study the influence of temperature on the binding energy of a hydrogenic donor impurity in a ridge quantum wire using a variational procedure within the effective mass approximation. We calculate the binding energy of the donor impurity in its ground state and first few excited states in a V-groove GaAs/Ga1-xAlxAs quantum wire for various impurity positions and different temperatures. We find that the temperature and impurity locations can have important effect in the binding energy of the donor impurity. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：543 / 547

页数：5

共 26 条

[1]

[Anonymous], J PHYS CONDENS MATTE

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